Wear leveling pro AT45DBxxx

Jan Waclawek konfera na efton.sk
Pátek Listopad 28 16:45:32 CET 2014


>Taky mam ten dojem, ze nic o nejakem stavovem bytu jsem tam nenasel - 
>nakonec jedina operace, ktera automaticky neprovede erase je
>
>BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT
>BUILT-IN ERASE: A previously erased page within
>main memory can be programmed with the contents of
>either buffer 1 or buffer 2.

Tak aby sme tu nekecali len tak do luftu, tak som si stiahol aktualny
datasheet AT45DB321E priamo od Adesta http://www.adestotech.com/at45db321e
-> http://www.adestotech.com/sites/default/files/datasheets/doc8784.pdf ,
a na strane 11 kapitola 6.5 je Main Memory Byte/Page Program through
Buffer 1 without Built-In Erase . Vyberiem relevantne pasaze: [...] "Any
number of bytes (1 to 512) can be entered." [...] " Only the data bytes
that were clocked into the device will be programmed into the main memory."

A este raz sa zopakujem: dokazom toho, ze sa naozaj jedna o programovanie
po byte (a nie vycitanie celeho page + prepisanie casti buffru novymi
datami + spatny zapis) je aj to, ze to programovanie trva v zavislosti od
poctu zapisovanych byte (the program time will be a multiple of the tBP
time depending on the number of bytes being programmed) a nie tolko, kolko
zapis celeho page (co je popisane v kap. 6.3, Vami spominany Buffer to
Main Memory Page Program without Built-In Erase, "The programming of the
page is internally self-timed and should take place in a maximum time of
tP").


>Jestli je SLC nebo MLC je mi celkem jedno, spis me prekvapilo, ze primo 
>v DS neni uveden pocet E/W cyklu, aspon jsem jej nenasel. 

Hned na uvodnej strane:
 Endurance: 100,000 program/erase cycles per page minimum


wek



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